Publication detail
TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)
KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. BAUER, P. ŠIKOLA, T.
English title
TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)
Type
Paper in proceedings (conference paper)
Language
en
Original abstract
In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.
Released
2003-09-08
Publisher
FÚ AV ČR
Location
Praha
Book
ECOSS 22 CD
Pages count
2
BIBTEX
@inproceedings{BUT11087,
author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Petr {Bauer} and Tomáš {Šikola}",
title="TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)",
booktitle="ECOSS 22 CD",
year="2003",
pages="2",
publisher="FÚ AV ČR",
address="Praha"
}