Publication detail

Modelling of the Czochralski flow

FRANCŮ, J.

English title

Modelling of the Czochralski flow

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

Czochralski method of industrial production of silicon single crystal consists in pulling up the single crystal from Silicon melt. The flow of the melt during this production is called Czochralski flow. Its character determines concentration of desired oxygen impurity in the crystal. The mathematical description of the Czochralski flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), heat convection-conduction equation, convection-diffusion equation for oxygen impurity and an equation describing magnetic field effect. The paper contains derivation of the model, its weak and operator formulation, its justification and proof of existence of solution to the both stationary and evolutionary problems.

Keywords in English

Czochralski flow, mathematical modelling, weak formulation

Released

1998-01-01

ISSN

1085-3375

Volume

3

Number

1-2

Pages from–to

1–40

Pages count

40

BIBTEX


@article{BUT38838,
  author="Jan {Franců}",
  title="Modelling of the Czochralski flow",
  journal="Abstract and Applied Analysis",
  year="1998",
  volume="3",
  number="1-2",
  pages="1--40",
  issn="1085-3375"
}