Publication detail

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

ROUČKA, R. TOLLE, J. CROZIER, P. TSONG, I. KOUVETAKIS, J. SMITH, D.

English title

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Released

2002-10-23

ISSN

0003-6951

Journal

Applied Physics Letters

Volume

79

Number

18

Pages from–to

2880–

Pages count

3

BIBTEX


@article{BUT40592,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith}",
  title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
  journal="Applied Physics Letters",
  year="2002",
  volume="79",
  number="18",
  pages="3",
  issn="0003-6951"
}