Publication detail

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. ŠIKOLA, T.

English title

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

Paper deals with a ToF-LEIS Analysis of ultra thin films, Ga and Ga-N layer growth on Si(111)

Released

2004-01-01

ISSN

0039-6028

Journal

SURFACE SCIENCE

Volume

566-568

Number

9

Pages from–to

885–

Pages count

5

BIBTEX


@article{BUT42358,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Tomáš {Šikola}",
  title="ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)",
  journal="SURFACE SCIENCE",
  year="2004",
  volume="566-568",
  number="9",
  pages="5",
  issn="0039-6028"
}