Publication detail

Analysis of thin films by TOF-LEIS

PRŮŠA, S. KOLÍBAL, M. BÁBOR, P. MACH, J. ŠIKOLA, T.

English title

Analysis of thin films by TOF-LEIS

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

In the paper the design and application of a TOF-LEIS instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of TOF-LEIS to analyse near-to-surface layers of thin films prepared both ex-situ and in-situ. Additionally, the monitoring of diffusion processes close to a sample surface by this technique is presented. It is shown that the broadening of peaks in TOF-LEIS spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.

Keywords in English

Time of Flight, TOF, Low energy, Ion Scattering, LEIS, Surfaces

Released

2007-05-01

ISSN

0587-4246

Journal

ACTA PHYSICA POLONICA A

Volume

111

Number

3

Pages from–to

335–341

Pages count

7

BIBTEX


@article{BUT43454,
  author="Stanislav {Průša} and Miroslav {Kolíbal} and Petr {Bábor} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Analysis of thin films by TOF-LEIS",
  journal="ACTA PHYSICA POLONICA A",
  year="2007",
  volume="111",
  number="3",
  pages="335--341",
  issn="0587-4246"
}