Publication detail

Imaging reflectometery in situ

URBÁNEK, M. SPOUSTA, J. BĚHOUNEK, T. ŠIKOLA, T.

English title

Imaging reflectometery in situ

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

An innovative method of in situ real-time optical monitoring of thin film deposition and etching is presented. In this technique, intensity maps of a thin film corresponding to a series of wavelengths selected by a monochromator 300 – 800 nm are recorded by a CCD camera. From the maps the reflectance spectra at individual points of the sample surface can be extracted. By fitting the reflectance spectra to the theoretical ones, the maps of a thin film morphology (including optical parameters) and their temporal development during technological processes can be obtained. The method was tested by in situ observation of the growth of silicon nitride and silicon oxide thin films prepared by ion beam sputtering and by the monitoring of etching of thermally grown SiO2 thin films.

Keywords in English

Reflectometry; Thin films; Optical characterization

Released

2007-08-23

ISSN

0003-6935

Journal

Applied Optics

Volume

46

Number

25

Pages from–to

6309–6313

Pages count

5

BIBTEX


@article{BUT44051,
  author="Michal {Urbánek} and Jiří {Spousta} and Tomáš {Běhounek} and Tomáš {Šikola}",
  title="Imaging reflectometery in situ",
  journal="Applied Optics",
  year="2007",
  volume="46",
  number="25",
  pages="6309--6313",
  issn="0003-6935"
}