Publication detail
Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands
ČECHAL, J. LUKSCH, J. KOŇÁKOVÁ, K. URBÁNEK, M. KOLÍBALOVÁ, E. ŠIKOLA, T.
English title
Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands
Type
Peer-reviewed article not indexed in WoS or Scopus
Language
en
Original abstract
The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 – 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 – 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 – 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.
Keywords in English
Cobalt, Co; Silicon dioxide, SiO2; Islands, XPS, Photoelectron spectroscopy; SPM, AFM, MFM.
Released
2008-08-01
ISSN
0039-6028
Journal
SURFACE SCIENCE
Volume
602
Number
15
Pages from–to
2693–2698
Pages count
6
BIBTEX
@article{BUT47128,
author="Jan {Čechal} and Jaroslav {Luksch} and Kateřina {Koňáková} and Michal {Urbánek} and Eva {Kolíbalová} and Tomáš {Šikola}",
title="Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands",
journal="SURFACE SCIENCE",
year="2008",
volume="602",
number="15",
pages="2693--2698",
issn="0039-6028"
}