Publication detail
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. ČECHAL, J.
English title
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
Type
Paper in proceedings (conference paper)
Language
en
Original abstract
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Keywords in English
Spectroscopic Ellipsometry, Ultrathin Film
Released
2001-11-15
Publisher
FEI VUT v Brně
Location
Brno
ISBN
80-214-1992-X
Book
Sborník příspěvků konference Nové trendy ve fyzice
Pages from–to
415–
Pages count
5
BIBTEX
@inproceedings{BUT6513,
author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Jan {Čechal}",
title="Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis",
booktitle="Sborník příspěvků konference Nové trendy ve fyzice",
year="2001",
pages="5",
publisher="FEI VUT v Brně",
address="Brno",
isbn="80-214-1992-X"
}