Transportní charakteristiky a Hoogeův šumový parametr ve strukturách N-GaN

Transport Properties and Hooge Noise Parameter of N-GaN

conference paper

en

The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.

The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.

The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.

noise, fluctuations

2004

01.01.2003

CNRL

Prague

80-239-1005-1

Noise and Fluctuations

6