Publication detail

Growth of gallium on sillicon: A TOF-LEIS and AFM study

KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. BARTOŠÍK, M. TOMANEC, O. ŠIKOLA, T.

English title

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Type

Paper in proceedings (conference paper)

Language

en

Original abstract

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Released

2004-11-11

Publisher

VUT v Brně

Location

Brno

ISBN

80-7355-024-5

Book

New Trend in Physics

Pages from–to

230–

Pages count

4

BIBTEX


@inproceedings{BUT14279,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Miroslav {Bartošík} and Ondřej {Tomanec} and M. {Draxler} and P. {Bauer} and Tomáš {Šikola}",
  title="Growth of gallium on sillicon: A TOF-LEIS and AFM study",
  booktitle="New Trend in Physics",
  year="2004",
  pages="4",
  publisher="VUT v Brně",
  address="Brno",
  isbn="80-7355-024-5"
}