Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

Peer-reviewed article not indexed in WoS or Scopus

en

Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.

Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis

2008-01-11

0003-6951

Applied Physics Letters

92

1

011929-1–011929-3

3