Publication detail

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

FRANTA, D. OHLÍDAL, I. KLAPETEK, P.OHLÍDAL, M.

English title

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Type

WoS Article

Language

en

Original abstract

The results of optical and atomic force microscopy characterization of oxide thin films prepared by thermal oxidation of GaAs single crystal wafers at a temperature of 500 deg oof Celsius in air are presented. The optical characterization is performed using multi-sample modification of the method based on combining variable angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry. It is shown that the films exhibit the rough lower boundaries and refractive index profile inhomogeneities. The spectral dependences of refractive index and extinction coefficient of these films are presented within wide spectral region, i.e., 210-900 nm. The values of thicknesses and roughness parameters characterizing the oxide films are introduced as well.

Keywords in English

GaAs oxide films, ellipsometry, reflectometry, AFM, optical constants, roughness

Released

2004-01-01

Publisher

John Wiley & Sons, Ltd.

Location

CHICHESTER PO19 8SQ, W SUSSEX, ENGLAND

ISSN

0142-2421

Journal

SURFACE AND INTERFACE ANALYSIS

Volume

36

Number

8

Pages from–to

1203–1206

Pages count

4

BIBTEX


@article{BUT46462,
  author="Daniel {Franta} and Ivan {Ohlídal} and Petr {Klapetek} and Miloslav {Ohlídal}",
  title="Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="2004",
  volume="36",
  number="8",
  pages="1203--1206",
  issn="0142-2421"
}