Detail publikace

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

FRANTA, D. OHLÍDAL, I. KLAPETEK, P.OHLÍDAL, M.

Anglický název

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Typ

Článek WoS

Jazyk

en

Originální abstrakt

The results of optical and atomic force microscopy characterization of oxide thin films prepared by thermal oxidation of GaAs single crystal wafers at a temperature of 500 deg oof Celsius in air are presented. The optical characterization is performed using multi-sample modification of the method based on combining variable angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry. It is shown that the films exhibit the rough lower boundaries and refractive index profile inhomogeneities. The spectral dependences of refractive index and extinction coefficient of these films are presented within wide spectral region, i.e., 210-900 nm. The values of thicknesses and roughness parameters characterizing the oxide films are introduced as well.

Klíčová slova anglicky

GaAs oxide films, ellipsometry, reflectometry, AFM, optical constants, roughness

Vydáno

2004-01-01

Nakladatel

John Wiley & Sons, Ltd.

Místo

CHICHESTER PO19 8SQ, W SUSSEX, ENGLAND

ISSN

0142-2421

Časopis

SURFACE AND INTERFACE ANALYSIS

Ročník

36

Číslo

8

Strany od–do

1203–1206

Počet stran

4

BIBTEX


@article{BUT46462,
  author="Daniel {Franta} and Ivan {Ohlídal} and Petr {Klapetek} and Miloslav {Ohlídal}",
  title="Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="2004",
  volume="36",
  number="8",
  pages="1203--1206",
  issn="0142-2421"
}