Publication detail
Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface
MACH, J. ČECHAL, J. KOLÍBAL, M. POTOČEK, M. ŠIKOLA, T.
English title
Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface
Type
Peer-reviewed article not indexed in WoS or Scopus
Language
en
Original abstract
The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.
Keywords in English
Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission
Released
2008-05-15
ISSN
0039-6028
Journal
SURFACE SCIENCE
Volume
602
Number
10
Pages from–to
1898–1902
Pages count
5
BIBTEX
@article{BUT46749,
author="Jindřich {Mach} and Jan {Čechal} and Miroslav {Kolíbal} and Michal {Potoček} and Tomáš {Šikola}",
title="Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface",
journal="SURFACE SCIENCE",
year="2008",
volume="602",
number="10",
pages="1898--1902",
issn="0039-6028"
}