Detail publikace

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

MACH, J. ČECHAL, J. KOLÍBAL, M. POTOČEK, M. ŠIKOLA, T.

Anglický název

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Klíčová slova anglicky

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

Vydáno

2008-05-15

ISSN

0039-6028

Časopis

SURFACE SCIENCE

Ročník

602

Číslo

10

Strany od–do

1898–1902

Počet stran

5

BIBTEX


@article{BUT46749,
  author="Jindřich {Mach} and Jan {Čechal} and Miroslav {Kolíbal} and Michal {Potoček} and Tomáš {Šikola}",
  title="Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface",
  journal="SURFACE SCIENCE",
  year="2008",
  volume="602",
  number="10",
  pages="1898--1902",
  issn="0039-6028"
}