Publication detail
High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes
PIZZINI, S. UHLÍŘ, V. VOGEL, J. ROUGEMAILLE, N. LARIBI, S. CROS, V. JIMÉNEZ, E. CAMARERO, J. TIEG, C. BONET, E. BONFIM, M. MATTANA, R. DERANLOT, C. PETROFF, F. ULYSSE, C. FAINI, G. FERT, A.
English title
High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes
Type
Peer-reviewed article not indexed in WoS or Scopus
Language
en
Original abstract
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^12 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
Keywords in English
Domain Wall; Spin Valve, Motion
Released
2009-01-30
ISSN
1882-0778
Journal
Applied Physics Express
Volume
2
Number
2
Pages from–to
023003-1–023003-3
Pages count
3