Detail publikace
High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes
PIZZINI, S. UHLÍŘ, V. VOGEL, J. ROUGEMAILLE, N. LARIBI, S. CROS, V. JIMÉNEZ, E. CAMARERO, J. TIEG, C. BONET, E. BONFIM, M. MATTANA, R. DERANLOT, C. PETROFF, F. ULYSSE, C. FAINI, G. FERT, A.
Anglický název
High Domain Wall Velocity at Zero Magnetic Field Induced by Low Current Densities in Spin Valve Nanostripes
Typ
Článek recenzovaný mimo WoS a Scopus
Jazyk
en
Originální abstrakt
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below 10^12 A/m2, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
Klíčová slova anglicky
Domain Wall; Spin Valve, Motion
Vydáno
2009-01-30
ISSN
1882-0778
Časopis
Applied Physics Express
Ročník
2
Číslo
2
Strany od–do
023003-1–023003-3
Počet stran
3