Publication detail

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

MAŠEK, K. VÁCLAVŮ, M. BÁBOR, P. MATOLÍN, V.

English title

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ – Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.

Keywords in English

Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering

Released

2009-04-15

ISSN

0169-4332

Journal

APPLIED SURFACE SCIENCE

Volume

255

Number

13-14

Pages from–to

6656–6660

Pages count

5

BIBTEX


@article{BUT47187,
  author="Karel {Mašek} and Michal {Václavů} and Petr {Bábor} and Vladimír {Matolín}",
  title="Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study",
  journal="APPLIED SURFACE SCIENCE",
  year="2009",
  volume="255",
  number="13-14",
  pages="6656--6660",
  issn="0169-4332"
}