Detail publikace
Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study
MAŠEK, K. VÁCLAVŮ, M. BÁBOR, P. MATOLÍN, V.
Anglický název
Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study
Typ
Článek recenzovaný mimo WoS a Scopus
Jazyk
en
Originální abstrakt
Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ – Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.
Klíčová slova anglicky
Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering
Vydáno
2009-04-15
ISSN
0169-4332
Časopis
APPLIED SURFACE SCIENCE
Ročník
255
Číslo
13-14
Strany od–do
6656–6660
Počet stran
5
BIBTEX
@article{BUT47187,
author="Karel {Mašek} and Michal {Václavů} and Petr {Bábor} and Vladimír {Matolín}",
title="Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study",
journal="APPLIED SURFACE SCIENCE",
year="2009",
volume="255",
number="13-14",
pages="6656--6660",
issn="0169-4332"
}