Publication detail

Strain mapping by Scanning Low Energy Electron Microscopy

MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.

English title

Strain mapping by Scanning Low Energy Electron Microscopy

Type

Peer-reviewed article not indexed in WoS or Scopus

Language

en

Original abstract

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

Keywords in English

scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain

Released

2011-03-01

Publisher

Trans Tech Publications

Location

Switzerland

ISSN

1013-9826

Journal

Key Engineering Materials (print)

Volume

465

Number

1

Pages from–to

338–341

Pages count

4

BIBTEX


@article{BUT49965,
  author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil}",
  title="Strain mapping by Scanning Low Energy Electron Microscopy",
  journal="Key Engineering Materials (print)",
  year="2011",
  volume="465",
  number="1",
  pages="338--341",
  issn="1013-9826"
}