Detail publikace
Strain mapping by Scanning Low Energy Electron Microscopy
MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.
Anglický název
Strain mapping by Scanning Low Energy Electron Microscopy
Typ
Článek recenzovaný mimo WoS a Scopus
Jazyk
en
Originální abstrakt
The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.
Klíčová slova anglicky
scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain
Vydáno
2011-03-01
Nakladatel
Trans Tech Publications
Místo
Switzerland
ISSN
1013-9826
Časopis
Key Engineering Materials (print)
Ročník
465
Číslo
1
Strany od–do
338–341
Počet stran
4
BIBTEX
@article{BUT49965,
author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil}",
title="Strain mapping by Scanning Low Energy Electron Microscopy",
journal="Key Engineering Materials (print)",
year="2011",
volume="465",
number="1",
pages="338--341",
issn="1013-9826"
}