Publication detail
Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model
PAVELKA, J. TANUMA, N. TACANO, M. ŠIKULA, J. MUSHA, T.
Czech title
Hogeův parametr ve strukturách InGaAs
English title
Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model
Type
conference paper
Language
en
Original abstract
Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
Czech abstract
Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
English abstract
Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
Keywords in English
noise, fluctuations
RIV year
2004
Released
01.01.2003
Publisher
CNRL
Location
Prague
ISBN
80-239-1005-1
Book
Noise and Fluctuations
Pages count
4
BIBTEX
@inproceedings{BUT9392,
author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha},
title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model",
booktitle="Noise and Fluctuations",
year="2003",
month="January",
publisher="CNRL",
address="Prague",
isbn="80-239-1005-1"
}