Detail publikace

Hogeův parametr ve strukturách InGaAs

PAVELKA, J. TANUMA, N. TACANO, M. ŠIKULA, J. MUSHA, T.

Český název

Hogeův parametr ve strukturách InGaAs

Anglický název

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

en

Originální abstrakt

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Český abstrakt

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Anglický abstrakt

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Klíčová slova anglicky

noise, fluctuations

Rok RIV

2004

Vydáno

01.01.2003

Nakladatel

CNRL

Místo

Prague

ISBN

80-239-1005-1

Kniha

Noise and Fluctuations

Počet stran

4

BIBTEX


@inproceedings{BUT9392,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha},
  title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model",
  booktitle="Noise and Fluctuations",
  year="2003",
  month="January",
  publisher="CNRL",
  address="Prague",
  isbn="80-239-1005-1"
}