Detail publikace

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

OHLÍDAL, I. FRANTA, D. PINČÍK, E. OHLÍDAL, M.

Anglický název

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

Results concerning optical analysis of the SiO2/Si system performed by combined ellipsometric and reflectometric method used in multiple-sample modification are presented. This method is based on combining both single-wavelength method and the dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with a transition layer and the layer with rough boundaries are used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of other parameters are determined. It is shown that that the simplest model with the smooth boundary is the most convinient with the experimental data.

Klíčová slova anglicky

optical constants of Si and SiO2; spectroscopic reflectometry; spectroscopic ellipsometry

Vydáno

1999-08-01

ISSN

0142-2421

Časopis

SURFACE AND INTERFACE ANALYSIS

Ročník

28

Číslo

1

Strany od–do

240–

Počet stran

5

BIBTEX


@article{BUT37558,
  author="Ivan {Ohlídal} and Daniel {Franta} and E. {Pinčík} and Miloslav {Ohlídal}",
  title="Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="1999",
  volume="28",
  number="1",
  pages="5",
  issn="0142-2421"
}