Detail publikace

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

ROUČKA, R. TOLLE, J. CROZIER, P. CHIZMESHYA, A. TSONG, I. KOUVETAKIS, J. POWELEIT, C. SMITH, D.

Anglický název

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Vydáno

2002-05-20

ISSN

0031-9007

Časopis

Physical Review Letters

Ročník

88

Číslo

20

Strany od–do

206102–

Počet stran

5

BIBTEX


@article{BUT40591,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis} and C. D. {Poweleit} and D. J. {Smith}",
  title="Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",
  journal="Physical Review Letters",
  year="2002",
  volume="88",
  number="20",
  pages="5",
  issn="0031-9007"
}