Detail publikace

A Study of Thin Oxide Films by Ellipsometry and AR XPS

TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. NAVRÁTIL, K. ČECHAL, J. JURKOVIČ, P. BÁBOR, P.

Anglický název

A Study of Thin Oxide Films by Ellipsometry and AR XPS

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Vydáno

2002-08-01

ISSN

0142-2421

Časopis

SURFACE AND INTERFACE ANALYSIS

Ročník

34

Číslo

1

Strany od–do

531–

Počet stran

4

BIBTEX


@article{BUT40890,
  author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Karel {Navrátil} and Jan {Čechal} and Patrik {Jurkovič} and Petr {Bábor}",
  title="A Study of Thin Oxide Films by Ellipsometry and AR XPS",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="2002",
  volume="34",
  number="1",
  pages="4",
  issn="0142-2421"
}