Detail publikace

Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Samek O, Leis F, Margetic V, Malina R, Niemax K, Hergenroder R

Anglický název

Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

Planar laser-induced fluorescence measurements were used to investigate the expansion dynamics of a femtosecond laser-induced plasma. Temporally and spatially resolved measurements were performed to monitor the atoms that were ablated from a silicon target. A dye laser (lambda = 288.16 nm) was used to excite fluorescence signals. The radiation of an off-resonant transition (Si 390.55 nm) was observed at different distances from the target surface. This allowed easy detection of the ablated Si atoms without problems caused by scattered laser light. Abel inversion was applied to obtain the radial distribution of the Si atoms. The atom distribution in the plasma shows some peculiarities, depending on the crater depth. (C) 2003 Optical Society of America.

Klíčová slova anglicky

ABLATED COPPER, INDUCED BREAKDOWN, PLUME, EMISSION, GAS, SPECTROSCOPY, EXCITATION, DEPOSITION, CU-2, SI

Vydáno

2003-10-20

ISSN

0003-6935

Časopis

Applied Optics

Ročník

42

Číslo

30

Strany od–do

6001–

Počet stran

5

BIBTEX


@article{BUT42060,
  author="Ota {Samek} and Radomír {Malina}",
  title="Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence",
  journal="Applied Optics",
  year="2003",
  volume="42",
  number="30",
  pages="5",
  issn="0003-6935"
}