Detail publikace
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
KOLÍBAL, M. PRŮŠA, S. PLOJHAR, M. BÁBOR, P. POTOČEK, M. TOMANEC, O. KOSTELNÍK, P. MARKIN, S. BAUER, P. ŠIKOLA, T.
Anglický název
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
Typ
Článek recenzovaný mimo WoS a Scopus
Jazyk
en
Originální abstrakt
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.
Klíčová slova anglicky
low energy ion scattering; AFM; growth; gallium; silicon
Vydáno
2006-08-01
Nakladatel
Elsevier
ISSN
0168-583X
Časopis
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Ročník
249
Číslo
1-2
Strany od–do
318–321
Počet stran
4
BIBTEX
@article{BUT43514,
author="Miroslav {Kolíbal} and Stanislav {Průša} and Martin {Plojhar} and Petr {Bábor} and Michal {Potoček} and Ondřej {Tomanec} and Petr {Kostelník} and S. N. {Markin} and P. {Bauer} and Tomáš {Šikola}",
title="In situ Analysis of Ga-ultra Thin Films by ToF-LEIS",
journal="NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
year="2006",
volume="249",
number="1-2",
pages="318--321",
issn="0168-583X"
}