Detail publikace
A study of the formation and oxidation of PtSi by SR-PES
ČECHAL, J. ŠIKOLA, T.
Anglický název
A study of the formation and oxidation of PtSi by SR-PES
Typ
Článek recenzovaný mimo WoS a Scopus
Jazyk
en
Originální abstrakt
In the paper we present the results on the formation of platinum silicide (PtSi) by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and show the effect of a Pt/Si sample exposure to both a low and high-pressure oxygen atmosphere at the end of an annealing process. We have carried out a detailed analysis of high resolution photoelectron spectra of the Pt 4f and Si 2p peaks which were taken during the sample annealing at specific temperatures. In addition to the generally known Pt2Si and PtSi phases we have recognized an additional intermediate phase during the formation of Pt2Si and attributed it to the Pt3Si phase. We have proved that silicon diffuses towards the sample surface. The results of a low-pressure oxygen experiment have shown that oxygen binds only to surface silicon, however, in the case of a PtSi sample prepared externally in the ON Semiconductor labs under nitrogen/oxygen atmosphere oxygen binds not only to surface silicon but also takes over Si atoms out of the PtSi phase which results in the formation of a SiO2 layer on almost pure platinum.
Klíčová slova anglicky
Platinum silicide; PtSi; Oxidation; Synchrotron radiation photoelectron spectroscopy (SR-PES); X-ray photoelectron spectroscopy (XPS)
Vydáno
2006-10-15
ISSN
0039-6028
Časopis
SURFACE SCIENCE
Ročník
600
Číslo
20
Strany od–do
4717–4722
Počet stran
6
BIBTEX
@article{BUT43516,
author="Jan {Čechal} and Tomáš {Šikola}",
title="A study of the formation and oxidation of PtSi by SR-PES",
journal="SURFACE SCIENCE",
year="2006",
volume="600",
number="20",
pages="4717--4722",
issn="0039-6028"
}