Detail publikace

Stability of hydrogen-terminated silicon surface under ambient atmosphere

KOLÍBAL, M. ČECHAL, J. BARTOŠÍK, M. MACH, J. ŠIKOLA, T.

Anglický název

Stability of hydrogen-terminated silicon surface under ambient atmosphere

Typ

Článek recenzovaný mimo WoS a Scopus

Jazyk

en

Originální abstrakt

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Klíčová slova anglicky

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

Vydáno

2010-03-15

ISSN

0169-4332

Časopis

APPLIED SURFACE SCIENCE

Ročník

256

Číslo

11

Strany od–do

3423–2426

Počet stran

4

BIBTEX


@article{BUT46912,
  author="Miroslav {Kolíbal} and Jan {Čechal} and Miroslav {Bartošík} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Stability of hydrogen-terminated silicon surface under ambient atmosphere",
  journal="APPLIED SURFACE SCIENCE",
  year="2010",
  volume="256",
  number="11",
  pages="3423--2426",
  issn="0169-4332"
}